Conductivity Characteristics of Acceptor-Mixed in Semiconductor in the Metal-Dielectric Boundary Region N-Zrnisn Resistance to External Influence

n-ZrNiSn to study the effect of heavy duty mode (concentration of acceptors NA, donors ND (1019-1021 cm-3) on magnetic, thermoelectric, resonant and structural properties of intermetallic p-type MgAgAs structural semiconductors ra, it consists in observing that semiconductors are resistant to external influences in high temperature and concentration ranges and studying conduction mechanisms processed. This means that the sample under consideration is a solid solution. The Mott transition and the appearance of defects in semiconductors due to impact are related to the appearance of metallic conductivity in the conduction band of impurities. considered.